BSIM Spice Model Enables FinFET and UTB IC Design

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  • #Computational modeling
  • #Doublegate FETs
  • #FinFETs
  • #Integrated circuit modeling
  • #Integrated circuits
  • #Logic gates
  • #MOSFETs
  • #Transistors

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    IEEE.tv is made possible by the Members of IEEE.

    This feature is accessible to IEEE Members only, with an IEEE Account. If you are an IEEE Member please sign in to enable this feature.

    In addition to exclusive access to IEEE.tv programming, IEEE members have file download, and can save favorite videos with myTV.

    Discover all the benefits of IEEE membership!

    Belong to the world's largest technical proffecional society

Two turn-key surface potential-based compact models are developed to simulate multigate transistors for integrated circuit (IC) designs.

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  • Published on
  • May 10, 2013

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