AlGaN/GaN Plasmonic Terahertz Detectors

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High electron sheet density due to polarization doping makes AlGaN/GaN HEMTs uniquely suitable for plasmonic terahertz detectors operating in a wide temperature range.

High electron sheet density due to polarization doping makes AlGaN/GaN HEMTs uniquely suitable for plasmonic terahertz detectors operating in a wide temperature range.

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