Ayssar Serhan - RFIC Industry Showcase - IMS 2020

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Mo2A-2 : A Reconfigurable SOI CMOS Doherty Power Amplifier Module for Broadband LTE High-Power User Equipment Applications
A reconfigurable broadband Doherty PA module for LTE HPUE (High Power User Equipment) applications is presented, which is the first to be based on an SOI-CMOS PA without predistortion and supply modulation. The PA die (1.3×1.7mm²) is fabricated in a 130nm SOI-CMOS process and assembled, using flip-chip, on a 3.2×3.7mm² laminate package. From 1.9GHz to 2.7GHz, the PA provides 28dBm of output power (Pout) under 3.4V supply voltage (Vdd), with a PAE higher than 35% and an E-UTRA ACLR lower than -35dBc when using a 10MHz-50RB QPSK LTE uplink signal, without predistortion. At 2.3GHz, the proposed PA achieves 43.5% of PAE and -39.6dBc of ACLR at 28dBm of Pout. When operating at Vdd=5V (HPUE mode), the PA reaches a saturated power of 4W with a maximum PAE of 57% and delivers a Pout of 31dBm with 42.6% of PAE and -35.7dBc of ACLR using a 20MHz-100RB QPSK LTE signal.

Ayssar Serhan - RFIC Industry Showcase - Mo2A-2 : A Reconfigurable SOI CMOS Doherty Power Amplifier Module for Broadband LTE High-Power User Equipment Applications

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