Compact 75 GHz LNA with 20-dB Gain and 4-dB Noise Figure - Woorim Shin - RFIC Showcase 2018

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#RFIC #2018 #Philadelphia #showcase #electrical engineering #technology #communications #wireless #eband #FinFET #NDP #LNA #transformer #communication model #gain #noise #solution #powerefficient

Woorim Shin from Intel Labs presents the specifications for Intel’s 22nm FinFET CMOS Technology within their target in E-band communication and explains its potential in next-generation communications. Shin explains the current technology and then factors the Compact 75 GHz LNA with 20-dB Gain and 4-dB Noise Figure into the measurement results.

Woorim Shin from Intel Labs presents the specifications for Intel’s 22nm FinFET CMOS Technology within their target in E-band communication and explains its potential in next-generation communications. Shin explains the current technology and then factors the Compact 75 GHz LNA with 20-dB Gain and 4-dB Noise Figure into the measurement results.

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