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Compact 75 GHz LNA with 20-dB Gain and 4-dB Noise Figure - Woorim Shin - RFIC Showcase 2018
Woorim Shin from Intel Labs presents the specifications for Intel’s 22nm FinFET CMOS Technology within their target in E-band communication and explains its potential in next-generation communications. Shin explains the current technology and then factors the Compact 75 GHz LNA with 20-dB Gain and 4-dB Noise Figure into the measurement results.
Woorim Shin from Intel Labs presents the specifications for Intel’s 22nm FinFET CMOS Technology within their target in E-band communication and explains its potential in next-generation communications. Shin explains the current technology and then factors the Compact 75 GHz LNA with 20-dB Gain and 4-dB Noise Figure into the measurement results.
