Micro-Apps 2013: Designing an ETSI E-Band Circuit for a MM Wave Wireless System

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Designing an ETSI E-Band Circuit for a MM Wave Wireless System

Dr. Michael Heimlich and Dustin Hoekstra

AWR Corporation

Highly nonlinear wireless system components, including GaAs pHEMT frequency doublers, quadruplers, and power amplifiers (PAs), are important for E-band backhaul applications. Achieving first-pass success with aggressive specifications for output power and power-added efficiency (PAE) over very broad bandwidth is challenging in and of itself; doing this with a new GaAs pHEMT MMIC production process is even more so. This microapp will present the design approach taken that was able to achieve world-class, first-time, first-pass success of a very high performance integrated circuit (IC) chipset for next generation wireless communications. Designs include a Q-to-E band doubler and a K-to-E band quadrupler circuit with an E-band medium power amplifier operating over the full ETSI band. The design approach will include discussion of device modeling, design flow, and tool selection.

IMS2013 Micro-Apps Wednesday 1530

Designing an ETSI E-Band Circuit for a MM Wave Wireless System

Dr. Michael Heimlich and Dustin Hoekstra, AWR Corporation

IMS2013 Micro-Apps Wednesday 1530

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