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Electromigration Behavior of Hybrid Bonded Cu-Microbumps: Effect of Dielectric, Metal and Interface Properties
Presented at the 2026 IEEE Hybrid Bonding Symposium, Jan 21-22, 2026 in Silicon Valley. More information below.
(19:30 + Q&A) Christopher Charles Morrissey, Purdue University
Subject: As semiconductor scaling faces diminishing returns, 3D heterogeneous integration (3D-HI) has emerged as a performance booster due to shorter interconnects with reduced latency, ability to combine many functionalities, and cost savings driven by system architectures. For 3D-HI, interconnect scaling is a key enabler and must support the high-density requirements with pitches below 5 um with wafer-to-wafer (W2W) or die-to-wafer (D2W) bonding. Several dielectric materials such as SiO2, SiCN and low-temperature curable polymer dielectrics can be used to create the temporary dielectric bonding to enable Cu-to-Cu permanent bonding. Oxide–Cu hybrid bonding enables precise sub-micron pitch alignment and robust joint formation, making it the leading candidate for logic and SRAM chip integration. In contrast, polymer–Cu hybrid bonding has already demonstrated 10 um pitch capability, strong particle tolerance, and low-temperature annealing, positioning it as an attractive solution for HBM stacking. Electromigration lifetime in hybrid bonded interconnects is governed by residual stress, atomic diffusion, effective charge number, interface adhesion, and elastic modulus. Coefficient of thermal expansion (CTE) mismatch between Cu and inorganic dielectrics such as SiO2 or SiCN generates a very different tensile/compressive stress state than that produced by high-CTE polymers like polyimide, leading to distinct EM reliability behavior for oxide-Cu vs. polymer-Cu hybrid bonds. Diffusion coefficients are further modulated by Cu grain structure, impurities, crystallographic orientation, and local temperature, while the effective charge number scales with resistivity, band structure and interface passivation, and elastic modulus links the evolving stress field to EM damage. In this work, we systematically vary these dielectric and metal properties to quantify their combined impact on electromigration-driven failure in hybrid-bonded interconnects.
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Presented at the 2026 IEEE Hybrid Bonding Symposium, Jan 21-22, 2026 in Silicon Valley. More information below.
(19:30 + Q&A) Christopher Charles Morrissey, Purdue University
Subject: As semiconductor scaling faces diminishing returns, 3D heterogeneous integration (3D-HI) has emerged as a performance booster due to shorter interconnects with reduced latency, ability to combine many functionalities, and cost savings driven by system architectures. For 3D-HI, interconnect scaling is a key enabler and must support the high-density requirements with pitches below 5 um with wafer-to-wafer (W2W) or die-to-wafer (D2W) bonding ...
