Materials and Processing for Fine-pitch Chip-to-Wafer Hybrid Bonding

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#Hybrid bonding #advanced packaging #metrology #2.5D #3D #die stacking #Cu-Cu

(21:10 + Q&A) Prof. Takafumi Fukushima, Tohoku University
From the First IEEE Hybrid Bonding Symposium
Summary: Fine-pitch Chip-to-Wafer Hybrid Bonding is a key enabler for the next-generation AI technologies. We have presented 6 hybrid bonding papers at ECTC 2024, which is the biggest advanced microelectronic packaging conference. Today, we will introduce our hybrid bonding achievement. The 1st hybrid bonding technology is a Multi-functional Self-Assembled Monolayer (Mf-SAM). This Mf-SAM has many functions such as CuO removal, Cu surface passivation, plasma compatibility, low-temperature decomposition, and long Q-time. The 2nd hybrid bonding technology is USM (Under-Seed Metal or Metallurgy), which induces a single-grain Cu growth at the bonding interfaces where no bonding interfaces are seen, which contributes to low-resistance and highly reliable Cu-Cu interconnections. The 3rd one is fine-pitch chip-to-wafer (CtW) hybrid bonding. We have successfully demonstrated the 3-µm-pitch Cu-Cu bonding with high alignment accuracy. The 4th one is the use of an acrylic dielectric and nanoparticulated Cu with a paste-type configuration. The advantages of these materials are low-temperature and small-force Cu-Cu bonding. The 5th one is water surface tension-driven self-assembly by which 50-µm-thin HBM test vehicles are built into a 16-layer structure. The self-assembly technologies can solve a potential trade-off between production throughput and alignment accuracy. The thin chips can be precisely aligned within 0.01 sec with an alignment accuracy of approximately 50 nm, and the accuracy is kept after hybrid bonding. The 6th hybrid bonding is an Ozone-Ethylene-Radical (OER)-CVD technique in which very active OH radicals are efficiently generated, and the SiO2 surface is rendered high hydrophilic, which means high-density Si-OH groups are formed on the dielectric layer without water rinsing processes and plasma damages. The mild radical activation process will contribute to mechanically robust and highly reliable 3D bonding.
Bio: Takafumi Fukushima received his Ph.D. degree in the Department of Materials Science and Chemical Engineering from Yokohama National University in 2003. From 2004 to 2009, he was an assistant professor at the Department of Bioengineering and Robotics at Tohoku University. Since 2010, he has been an associate professor at the New Industry Creation Hatchery Center (NICHe), Tohoku University. From 2016 to 2017 and 2022, He was a visiting faculty at CHIPS (Center for Heterogeneous Integration and Performance Scaling), Electrical Engineering Department, UCLA. He is currently working on Flexible Hybrid Electronics (FHE) and 3D-IC/chiplet holistic system integration with TSV/hybrid and advanced bonding technology at the Department of Mechanical Systems Engineering, Tohoku University, as an associate professor. He has been a senior member of the IEEE and Interconnections sub-committee of ECTC since 2013.

For other edited  videos from this symposium, visit  https://attend.ieee.org/hbs/?page_id=456

(21:10 + Q&A) Prof. Takafumi Fukushima, Tohoku University
From the First IEEE Hybrid Bonding Symposium
Summary: Fine-pitch Chip-to-Wafer Hybrid Bonding is a key enabler for the next-generation AI technologies. We have presented 6 hybrid bonding papers at ECTC 2024, which is the biggest advanced microelectronic packaging conference. Today, we will introduce our hybrid bonding achievement. The 1st hybrid bonding technology is ...

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