A Fully-Integrated SOI CMOS Complex-Impedance Detector for Matching Network Tuning in LTE Power Amplifier: RFIC Interactive Forum

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This paper describes a wide dynamic-range and accurate complex-impedance detector for adaptive power amplifier load tuning systems. The detector IC, fabricated in a 130 nm SOI technology, consumes 7mA under 2.5V supply voltage. It can handle LTE signals with an input power from 0 dBm up to 40 dBm thanks to its variable attenuator system. System level measurements show that the detector has a very good accuracy in sensing the mismatched load impedance value in the VSWR region from 21 to 61.

This paper describes a wide dynamic-range and accurate complex-impedance detector for adaptive power amplifier load tuning systems. The detector IC, fabricated...

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