A Ka-Band 4-Ch Bi-Directional CMOS T/R Chipset for 5G Beamforming System: RFIC Interactive Forum 2017

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This paper presents a Ka-band 4-channel bi-directional T/R chipset in 65 nm CMOS technology for 5G beamforming system. The proposed T/R chipset can provide bi-directional operation with moderate gain and dual polarization. Each channel consists of bi-directional gain blocks, a 5-bit step attenuator and a 5-bit phase shifter including tuning bits. The phase and attenuation coverage are 348 with the LSB of 11.25 and 31 dB with the LSB of 1 dB, respectively. The gain of 13 dB (Tx mode) and 6 dB (Rx mode) are achieved at 28 GHz including the 4-way power divider/combiner.

This paper presents a Ka-band 4-channel bi-directional T/R chipset in 65 nm CMOS technology for 5G beamforming system. The proposed T/R chipset...

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