Single Crystal AlGaN Bulk Acoustic Wave Resonators on Silicon Substrates with High Electromechanical Coupling: RFIC Industry Showcase

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Single Crystal AlGaN Bulk Acoustic Wave Resonators on Silicon Substrates with High Electromechanical Coupling

Akoustis Technologies, USA

Bulk acoustic wave (BAW) resonators using
single crystal AlGaN piezoelectric films are reported. Metal-
organic chemical vapor deposition (MOCVD) growth was
used to obtain single crystal AlGaN films on 150-mm diameter
<111> silicon substrates with (0002) XRD rocking curve
FWHM of 0.37
°
. Series-configured 12
Ω
BAW resonators
with resonant frequency of 2.302GHz were fabricated with
insertion loss of 0.29dB and an electromechanical coupling of
4.44%. Maximum resonator Q
max
was 1277, leading to a figure
of merit (FOM) of 57. Unloaded acoustic Q
r
was 4243, leading
to a FOM of 188. These FOM are the highest reported to date
for MOCVD-based single crystal resonators.
Index Terms
RF Filters, Silicon, Radio frequency
integrated circuits, Resonator filters, Mobile communication,
Piezoelectric devices, Electromechanical devices, Wide band
gap semiconductors, Acoustic waves.

Jeffrey B. Shealy, Michael D. Hodge, Pinal Patel, Ramakrishna Vetury, Alexander Yu. Feldman, Shawn R. Gibb, Mark D. Boomgarden, Michael P. Lewis, James B. Shealy, James R. Shealy 

Single Crystal AlGaN Bulk Acoustic Wave Resonators on Silicon Substrates with High Electromechanical Coupling 

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