Single Die Broadband CMOS Power Amplifier and Tracker with 37% Overall Efficiency for TDD/FDD LTE Applications: RFIC Industry Forum

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Single Die Broadband CMOS Power Amplifier and Tracker with 37% Overall Efficiency for TDD/FDD LTE Applications

This paper presents a 2.3GHz - 2.7GHz broadband CMOS FDD/TDD LTE Band 7, 38, 40 and 41 power amplifier (PA) fully integrated with a fast envelope tracker (ET) on a single 0.18µm CMOS die. The PA and the tracker achieve a 37% overall efficiency for 26.5dBm and -39dBc ACLR1. The entire design including the input/output match uses an active silicon area around 2.7mm2 . Index Terms—CMOS, GaAs, LTE, power amplifier, envelope tracking (ET).

Single Die Broadband CMOS Power Amplifier and Tracker with 37% Overall Efficiency for TDD/FDD LTE Applications

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