1. Home
  2. Premium
  3. Design and Fabrication of Self-Organized Ge QD/SiO2 with Raided Source/Drain for Advanced Transistors
Design and Fabrication of Self-Organized Ge QD/SiO2 with Raided Source/Drain for Advanced Transistors

This video program is a part of the Premium package:

Design and Fabrication of Self-Organized Ge QD/SiO2 with Raided Source/Drain for Advanced Transistors

  • IEEE MemberUS $10.00
  • Society MemberUS $5.00
  • IEEE Student MemberUS $10.00
  • Non-IEEE MemberUS $20.00
Purchase

Design and Fabrication of Self-Organized Ge QD/SiO2 with Raided Source/Drain for Advanced Transistors

0 views
  • Share
Create Account or Sign In to post comments

Next Up

01:46:04
Joint IEEE Day Celebration Italy & Switzerland Section 2020: The Microchip Revolution
>
02:46:02
Virtual Strategic Planning Retreat (VSPR) - Day 2 - CIS 2020
>
02:56:54
Virtual Strategic Planning Retreat (VSPR) - Day 1 - CIS 2020
>
1:00:00
Human Supervisory Control of Robotic Swarms
>
01:04:29
Supercomputing the loop of Biomechanics and Neuroscience
>
00:17:55
Writing Your Article for Magazine Publication
>