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High Performance Differential Amplifier Through the Direct Monolithic Integration of InP HBTs and Si CMOS on Silicon Substrates
T. E. Kazior[1], J. R. LaRoche[1], D. Loubychev[2], J. Fastenau[2], W. K. Liu[2], M. Urteaga[3], W. Ha[3], J. Bergman[3], M. J. Choe[3], M. T. Bulsara[4], E. A. Fitzgerald[4], D. Smith[5], D. Clark[5], R. Thompson[5], C. Drazek[6], N. Daval[6], L. Benaissa[7], E. Augendre[7], [1]Raytheon, Andover, United States, [2]IQE, Bethlehem, United States, [3]Teledyne, Thousand Oaks, United States, [4]MIT, Cambridge, United States, [5]Raytheon, Glenrothes, United Kingdom, [6]SOITEC, Bernin, France, [7]LETI, Grenoble, France
T. E. Kazior[1], J. R. LaRoche[1], D. Loubychev[2], J. Fastenau[2], W. K. Liu[2], M. Urteaga[3], W. Ha[3], J. Bergman[3], M. J. Choe[3], M. T. Bulsara[4], E. A. Fitzgerald[4], D. Smith[5], D. Clark[5], R. Thompson[5], C. Drazek[6], N. Daval[6], L. Benaissa[7], E. Augendre[7], [1]Raytheon, Andover, United States, [2]IQE, Bethlehem, United States, [3]Teledyne, Thousand Oaks, United States, [4]MIT, Cambridge, United States, [5]Raytheon, Glenrothes, United Kingdom, [6]SOITEC, Bernin, France, [7]LETI, Grenoble, France
