Technology Sessions: Surface Ga-Boosted Boron-Doped Si 0.5 Ge 0.5 Using In Situ CVD Epitaxy: Achieving 1.1 x 10^21 cm ^-3 Active Doping Concentration and 5.7 x 10^10 Omega-cm^2 Contact Resistivity

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Technology Sessions: Surface Ga-Boosted Boron-Doped Si 0.5 Ge 0.5 Using In Situ CVD Epitaxy: Achieving 1.1 x 10^21 cm ^-3 Active Doping Concentration and 5.7 x 10^10 Omega-cm^2 Contact Resistivity


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Technology Sessions: Surface Ga-Boosted Boron-Doped Si 0.5 Ge 0.5 Using In Situ CVD Epitaxy: Achieving 1.1 x 10^21 cm ^-3 Active Doping Concentration and 5.7 x 10^10 Omega-cm^2 Contact Resistivity

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