IEEE WEBINAR SERIES-March 5th, 2014: GaN Crushing Silicon...and Let Me Tell You How
Gallium Nitride is beginning to be broadly accepted in many power conversion and RF applications. The technology is rapidly developing and product experience in the field is expanding. This seminar will begin with an explanation of how GaN High Electron Mobility Transistors (HEMT) works, followed by an update on the state-of-the art in the technology.Following this update it will then move to several application examples including high frequency Envelope Tracking (ET), resonant DC-DC conversion, and Wireless Power Transmission.The seminar concludes with a look into future of the relatively young technology.
Gallium Nitride is beginning to be broadly accepted in many power conversion and RF applications. The technology is rapidly developing and product experience in the field is expanding. This seminar will begin with an explanation of how GaN High Electron Mobility Transistors (HEMT) works, followed by an update on the state-of-the art in the technology.Following this update it will then move to several application examples including high frequency Envelope Tracking (ET), resonant DC-DC conversion, and Wireless Power Transmission.The seminar concludes with a look into future of the relatively young technology.