The Evolution and Future of RF Silicon Technologies for THz Applications

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SiGe BiCMOS technologies offer a combination of digital circuit integration with high-performance analog transistors and passive devices. The author will compare CMOS, SiGe and, to a lesser extent, III-V HBT technologies. He will also present factors making SiGe technologies well-suited for THz integrated systems using IBM's technology menu to illustrate technology capability and the ITRS as a guide for when these technologies could be made available.

Harame compares CMOS, SiGe and, to a lesser extent, III-V HBT technologies

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