A Highly-Efficient 138-170GHz SiGe HBT Frequency Doubler for PowerConstrained Applications: RFIC Interactive Forum

A Highly-Efficient 138–170GHz SiGe HBT Frequency Doubler for PowerConstrained Applications

Christopher Coen1 , Saeed Zeinolabedinzadeh1 , Mehmet Kaynak2 , Bernd Tillack2 , John D. Cressler1 ; 1 Georgia Institute of Technology, USA, 2 IHP, Germany

This paper presents a 138–170 GHz active frequency doubler implemented in a 0.13 μm SiGe BiCMOS technology with a peak output power of 5.6 dBm and peak power-added efficiency of 7.6%. The doubler achieves a peak conversion gain of 4.9 dB and consumes only 36 mW of DC power at peak drive through the use of a push-push frequency doubling stage optimized for low drive power, along with a low-power output buffer. To the best of our knowledge, this doubler achieves the highest output power, efficiency, and fundamental frequency suppression of all D-band and G-band SiGe HBT frequency doublers to date