A 32GHz 20dBm-PSAT Transformer-Based Doherty Power Amplifier for MultiGb/s 5G Applications in 28nm Bulk CMOS: RFIC Interactive Forum 2017

583 views
Download
  • Share

This paper presents a 32 GHz transformer-based Doherty power amplifier (PA) in a 28 nm bulk CMOS process. There are two techniques proposed: linearization by means of AM-PM and AMAM compensation of the class AB and the class C amplifiers; and parallel-series-parallel power power combiner, wherein a current-mode parallel combiner complements the Doherty's voltage-mode series combiner to boost the output power. A saturated output power (PSAT) of 19.8 dBm and an OP1dB of 16 dBm are accomplished from 1V supply while supporting 15 Gb/s 64-QAM amplification at 11.7 dBm average output power. The chip achieves 21% PAE at PSAT and occupies 0.59 mm2 active area.

This paper presents a 32 GHz transformer-based Doherty power amplifier (PA) in a 28 nm bulk CMOS process. There are two techniques...

Advertisment

Advertisment