IMS 2014: Out-of-Plane and Inline RF Switches based on Ge2Sb2Te5 Phase-Change Material

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We fabricated and characterized novel RF switches based on Ge2Sb2Te5 phase change material. Such ohmic devices show non-volatile switching as the material is transforming between the amorphous and the crystalline state (10^5 resistivity change). We investigated their properties in two configurations: out-of-plane and inline switches. For an inline switch we measured an on-state resistance of 7 Ohm, and an off-state capacitance and resistance of 13.7 fF and 6.47 MOhm (Fcut-off ~1.6 THz).

This technical presentation investigates RF switches and their properties in two configurations: out-of-plane and inline switches.

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