GaN HEMTs and Schottky Diodes 790 views Download Download IEEE.tv is made possible by the Members of IEEE. This feature is accessible to IEEE Members only, with an IEEE Account. If you are an IEEE Member please sign in to enable this feature. In addition to exclusive access to IEEE.tv programming, IEEE members have file download, and can save favorite videos with myTV. Discover all the benefits of IEEE membership! Belong to the world's largest technical proffecional society Join / Renew Today Share Embed Static Responsive <iframe src="//ieeetv.ieee.org/player/embed_play/128535/auto" allowfullscreen frameborder="0" scrolling="no" width="100%"></iframe> Size: x <iframe src="//ieeetv.ieee.org/player/embed_play/128535/auto" allowfullscreen frameborder="0" scrolling="no" width="760" height="430" ></iframe> Copy Close +0 MTT-S (IMS) 2-SID-3 Conference Highlights Series Create Account or Sign In to post comments #IMS #THz This presentation reviews recent progress of high-frequency GaN HEMT and Schottky diode technologies that enable GaN MMICs operating in sub-millimeter-waver frequency ranges while maintaining their superior breakdown performance. August 16, 2013 Advertisment Next Up 00:08:06 Siwei Li - RFIC Student Showcase - IMS 2021> 00:03:49 Gaofeng Jin - RFIC Student Showcase - IMS 2021> 00:03:57 Shimin Huang - RFIC Student Showcase - IMS 2021> 00:04:15 Xinyan Tang - RFIC Student Showcase - IMS 2021> 00:04:23 Kejian Shi - RFIC Student Showcase - IMS 2021> 00:02:56 Xiaoteng Zhao - RFIC Student Showcase - IMS 2021> Advertisment
GaN HEMTs and Schottky Diodes 790 views Download Download IEEE.tv is made possible by the Members of IEEE. This feature is accessible to IEEE Members only, with an IEEE Account. If you are an IEEE Member please sign in to enable this feature. In addition to exclusive access to IEEE.tv programming, IEEE members have file download, and can save favorite videos with myTV. Discover all the benefits of IEEE membership! Belong to the world's largest technical proffecional society Join / Renew Today Share Embed Static Responsive <iframe src="//ieeetv.ieee.org/player/embed_play/128535/auto" allowfullscreen frameborder="0" scrolling="no" width="100%"></iframe> Size: x <iframe src="//ieeetv.ieee.org/player/embed_play/128535/auto" allowfullscreen frameborder="0" scrolling="no" width="760" height="430" ></iframe> Copy Close +0 MTT-S (IMS) 2-SID-3 Conference Highlights Series Create Account or Sign In to post comments #IMS #THz This presentation reviews recent progress of high-frequency GaN HEMT and Schottky diode technologies that enable GaN MMICs operating in sub-millimeter-waver frequency ranges while maintaining their superior breakdown performance. August 16, 2013
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