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A Compact 12-Watt High-Efficiency 2.1-2.7 GHz Class-E GaN HEMT Power Amplifier for Base Stations

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M. P. van der Heijden, M. Acar, J. S. Vromans, NXP Semiconductors, Eindhoven, Netherlands
M. P. van der Heijden, M. Acar, J. S. Vromans, NXP Semiconductors, Eindhoven, Netherlands

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