BSIM Spice Model Enables FinFET and UTB IC Design

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    IEEE Access
  • #Computational modeling
  • #Doublegate FETs
  • #FinFETs
  • #Integrated circuit modeling
  • #Integrated circuits
  • #Logic gates
  • #MOSFETs
  • #Transistors

Two turn-key surface potential-based compact models are developed to simulate multigate transistors for integrated circuit (IC) designs.

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  • Published on
  • May 10, 2013

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