1134

In high-power applications, when the current capacity needs to be further expanded, the method of using insulated gate bipolar transistors in parallel is usually used. However, due to the influence of parasitic parameters, the current of each branch of the paralleled IGBTs may be imbalanced. The imbalance of dynamic and static currents can cause overheating and overcurrent damage to the device. This paper studies a driving method that uses differential gate voltage and synchronous pulse to improve the current imbalance during the turn-on process of paralleled IGBTs. The effectiveness of the strategy is verified by simulation. The experimental results show that the voltage differential and pulse synchronous driving method can effectively reduce the dynamic current imbalance between paralleled IGBTs.